Supplier Device Package :
Voltage - Supply :
Driven Configuration :
Number of Drivers :
Rise / Fall Time (Typ) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
GLOBAL STOCKS
Default Photo RFQ
RFQ
1,273
In-stock
Infineon Technologies IR_HSS-LSS-GATEDRIVER Automotive, AEC-Q100 Active Digi-Reel® - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3 V ~ 36 V - High-Side 1 - 0.8V, 2.5V - - 6µs, 6µs
Default Photo
RFQ
2,239
In-stock
Infineon Technologies IR_HSS-LSS-GATEDRIVER Automotive, AEC-Q100 Active Cut Tape (CT) - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3 V ~ 36 V - High-Side 1 - 0.8V, 2.5V - - 6µs, 6µs
Default Photo
RFQ
2,852
In-stock
Infineon Technologies IR_HSS-LSS-GATEDRIVER Automotive, AEC-Q100 Active Tape & Reel (TR) - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3 V ~ 36 V - High-Side 1 - 0.8V, 2.5V - - 6µs, 6µs
AUIRS2301STR RFQ
RFQ
1,068
In-stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8SOIC Automotive, AEC-Q100 Active Digi-Reel® - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 5 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 200mA, 350mA 600V 130ns, 50ns
AUIRS2301STR
RFQ
1,141
In-stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8SOIC Automotive, AEC-Q100 Active Cut Tape (CT) - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 5 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 200mA, 350mA 600V 130ns, 50ns
AUIRS2301STR
RFQ
2,186
In-stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8SOIC Automotive, AEC-Q100 Active Tape & Reel (TR) - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 5 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 200mA, 350mA 600V 130ns, 50ns