- Series :
- Packaging :
- Input Type :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Voltage - Supply :
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- Logic Voltage - VIL, VIH :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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1,155
In-stock
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Texas Instruments | IC MOSFET DRIVER HI SPD 8-SOIC | - | Last Time Buy | Tape & Reel (TR) | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4 V ~ 7 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.4V | 3A, 3.2A | - | 17ns, 12ns | ||||
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RFQ |
620
In-stock
|
Infineon Technologies | IC GATE DRVR HI/LOW SIDE 10DFN | - | Last Time Buy | Digi-Reel® | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 4.5 V ~ 5.5 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35V | 10ns, 8ns | |||
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RFQ |
3,896
In-stock
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Infineon Technologies | IC GATE DRVR HI/LOW SIDE 10DFN | - | Last Time Buy | Cut Tape (CT) | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 4.5 V ~ 5.5 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35V | 10ns, 8ns | |||
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1,678
In-stock
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Infineon Technologies | IC GATE DRVR HI/LOW SIDE 10DFN | - | Last Time Buy | Tape & Reel (TR) | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 4.5 V ~ 5.5 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35V | 10ns, 8ns | ||||
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RFQ |
3,365
In-stock
|
Infineon Technologies | IC GATE DRVR HI/LOW SIDE 10DFN | - | Last Time Buy | Digi-Reel® | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 4.5 V ~ 5.5 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35V | 10ns, 8ns | |||
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RFQ |
2,178
In-stock
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Infineon Technologies | IC GATE DRVR HI/LOW SIDE 10DFN | - | Last Time Buy | Cut Tape (CT) | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 4.5 V ~ 5.5 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35V | 10ns, 8ns | |||
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1,359
In-stock
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Infineon Technologies | IC GATE DRVR HI/LOW SIDE 10DFN | - | Last Time Buy | Tape & Reel (TR) | Non-Inverting | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) | 4.5 V ~ 5.5 V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35V | 10ns, 8ns | ||||
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3,087
In-stock
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ON Semiconductor | IC GATE DVR HI/LOW SIDE 8-SOIC | Automotive, AEC-Q100 | Last Time Buy | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 10 V ~ 22 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 1.2V, 2.5V | 4.5A, 4.5A | 600V | 25ns, 20ns | ||||
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3,460
In-stock
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Power Integrations | IGBT DVR CORE 2500V | SCALE™-1 | Last Time Buy | - | - | -40°C ~ 85°C (TA) | - | - | - | 15V | - | Half-Bridge | 2 | IGBT, N-Channel, P-Channel MOSFET | - | 18A, 18A | - | - | ||||
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3,953
In-stock
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Power Integrations | GATE DVR CORE 1700V 44PIN | SCALE™-1 | Last Time Buy | - | - | -40°C ~ 85°C (TA) | - | - | - | 15V | - | Half-Bridge | 1 | IGBT, N-Channel, P-Channel MOSFET | - | 48A, 48A | - | - | ||||
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1,093
In-stock
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Maxim Integrated | IC DRIVER MOSFET 8-SOIC | - | Last Time Buy | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 8 V ~ 12.6 V | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 2A, 2A | 175V | 65ns, 65ns | ||||
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1,544
In-stock
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Intersil | IC FET DVR 60V/2.5A HF 20DIP | - | Last Time Buy | Tube | Inverting, Non-Inverting | -40°C ~ 125°C (TJ) | Through Hole | 20-DIP (0.300", 7.62mm) | 20-PDIP | 9.5 V ~ 15 V | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 1V, 2.5V | 2.6A, 2.4A | 75V | 10ns, 10ns | ||||
